© The Institution of Electrical Engineers
A radiation-hardened n-channel MOSFET has been developed by a combination of a polysilicon sidewall and SIMOX technology. The MOSFET is laterally isolated by multilayers of sidewall SiO2, sidewall polysilicon and field SiO2, It is vertically isolated by multilayers of highly oxygen-doped polysilicon and buried oxide. By using this isolation structure and a thin gate oxide, an increase in leakage currents and a threshold voltage shift were suppressed to less than 1.5 orders of magnitude and 0.08 V, respectively, after 106 rad(Si) irradiation.
References
-
-
1)
-
G.W. Hughes ,
R.J. Powell
.
MOS hardness characterization and its dependence upon some process and measurement variables.
IEEE Trans.
,
1569 -
1572
-
2)
-
K. Izumi ,
M. Doken ,
H. Ariyoshi
.
CMOS devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon.
Electron. Lett.
,
593 -
594
-
3)
-
G.E. Davis ,
H.L. Hughes
.
Total dose radiation-bias effects in laser-recrystallized SOI MOSFET's.
IEEE Trans.
,
1685 -
1689
-
4)
-
S. Nakashima ,
M. Akiya ,
K. Kato
.
Electric-field-shielding layers formed by oxygen implantation into silicon.
Electron. Lett.
,
568 -
570
-
5)
-
K. Izumi ,
Y. Omura ,
T. Sakai
.
SIMOX technology and its application to CMOS LSIs.
J. Electron. Mater.
,
845 -
861
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19860381
Related content
content/journals/10.1049/el_19860381
pub_keyword,iet_inspecKeyword,pub_concept
6
6