Electron mobility within 100 nm of the Si/sapphire interface in double-solid-phase epitaxially regrown SOS

Access Full Text

Electron mobility within 100 nm of the Si/sapphire interface in double-solid-phase epitaxially regrown SOS

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Field-effect electron mobility within 100 nm of the sapphire substrate in double-solid-phase epitaxially regrown silicon on sapphire has been measured. Electron mobility in the range of 500 cm2/Vs has been observed in this near-interfacial region, consistent with previously reported reductions in the crystal defect concentration.

Inspec keywords: epitaxial growth; semiconductor growth; semiconductor epitaxial layers; sapphire; semiconductor-insulator boundaries; silicon; carrier mobility; elemental semiconductors

Other keywords: near-interfacial region; semiconductor-insulator boundaries; Al2O3; thin-film depletion MOSFET; Si/sapphire interface; field effect electron mobility; sapphire substrate; crystal defect concentration; double-solid-phase epitaxially regrown SOS

Subjects: Electrical properties of metal-insulator-semiconductor structures; Methods of thin film deposition; Epitaxial growth; Metal-insulator-semiconductor structures; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Thin film growth, structure, and epitaxy

References

    1. 1)
      • T. Yoshii , S. Taguchi , T. Inoue , H. Tango . Improvement of SOS device performance by solid-phase epitaxy. Jpn. J. Appl. Phys. , 175 - 176
    2. 2)
      • S.T. Hsu , J.H. Scott . Mobility of current carriers in silicon-on-sapphire (SOS) films. RCA Rev. , 240 - 253
    3. 3)
      • S.S. Lau , S. Matteson , J.W. Mayer , P. Revesz , J. Gyulai , J. Roth , T.W. Sigmon , T. Cass . Improvement of crystalline quality of epitaxial Si layers by ion-implementation techniques. Appl. Phys. Lett. , 76 - 78
    4. 4)
      • R. Reedy , T.W. Sigmon , L.A. Christel . Suppressing Al out-diffusion in implantation amorphized and recrystallized silicon on sapphire films. Appl. Phys. Lett. , 707 - 709
    5. 5)
      • S.T. Hsu . Electron mobility in SOS films. IEEE Trans. , 913 - 916
    6. 6)
      • M.A. Parker , R. Sinclair , T.W. Sigmon . Lattice images of defect-free silicon on sapphire prepared by ion implantation. Appl. Phys. Lett. , 626 - 628
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19860366
Loading

Related content

content/journals/10.1049/el_19860366
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading