Operation of a high-frequency photodiode-HEMT hybrid photoreceiver at 10 GHz

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Operation of a high-frequency photodiode-HEMT hybrid photoreceiver at 10 GHz

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© The Institution of Electrical Engineers
Published

A hybrid photoreceiver based on an ITO/GaAs photodiode integrated with a 0.5 μm gate length high electron mobility transistor (HEMT) is reported. The receiver gave an 8 dB associated gain at 10 GHz compared with a discrete detector.

Inspec keywords: photodiodes; high electron mobility transistors; photodetectors

Other keywords: 10 GHz; high-frequency photodiode-HEMT hybrid photoreceiver; ITO/GaAs; gain; high electron mobility transistor

Subjects: Photoelectric devices; Other field effect devices

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