Improved molecular beam epitaxial growth of InP using solid sources

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Improved molecular beam epitaxial growth of InP using solid sources

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Published

Molecular beam epitaxy (MBE) has been used to grow high-purity InP layers using solid sources and a graphite cracking zone to generate P2. Close control of slice temperature was achieved by mounting the substrate on a 3 in (75.6 mm) silicon wafer with indium solder. In addition, two differently packed phosphorus sources were investigated to assess the effect of oxides/water on InP purity. Several InP layers with a 77 K mobility of ∼50000 cm2V−1s−1 were grown using a phosphorus source vacuum-packed at manufacture.

Inspec keywords: molecular beam epitaxial growth; III-V semiconductors; indium compounds; semiconductor epitaxial layers; semiconductor growth

Other keywords: III-V semiconductors; molecular beam epitaxial growth; InP; solid sources; slice temperature; graphite cracking zone; vacuum-packed

Subjects: Thin film growth, structure, and epitaxy; Vacuum deposition; Epitaxial growth; II-VI and III-V semiconductors

References

    1. 1)
      • J.S. Roberts , P. Dawson , G.B. Scott . Homoepitaxial molecular beam growth of InP on thermally cleaned (100) oriented substrates. Appl. Phys. Lett. , 905 - 907
    2. 2)
      • R.F.C. Farrow . The use of ion beams in molecular beam epitaxy. Thin Solid Films , 197 - 201
    3. 3)
      • T. Martin , C.R. Stanley , A. Iliadis , C.R. Whitehouse , D.E. Sykes . Identification of the major residual donor impurities in unintentionally doped InP grown by molecular beam epitaxy. Appl. Phys. Lett. , 994 - 996
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