In planar InGaAs/InP PIN photodiodes the minority-hole diffusion length and lifetime have been evaluated from measurements of the response to peripheral steady-state or pulse illumination. Very large values up to 74 μm and of 6 μs have been obtained for low-doped InGaAs. This high material quality could be revealed because surface effects are avoided in the utilised double heterostructures.
Inspec keywords: gallium arsenide; carrier lifetime; III-V semiconductors; indium compounds; photodiodes
Other keywords:
Subjects: Photoelectric devices; II-VI and III-V semiconductors
References
-
-
1)
- M. Yamaguchi , S. Shinoyama , C. Uemura . Electron mobility and minority-carrier lifetime of n-InP single crystals grown by liquid-encapsulated Czochralski method. J. Appl. Phys. , 6429 - 6431
-
2)
- T.P. Pearsall . Ga0.47In0.53As: a ternary semiconductor for photodetector applications. IEEE J. Quantum Electron. , 709 - 720
-
3)
- S. Sakai , M. Umeno , Y. Amemiya . Measurement of diffusion coefficient and surface recombination velocity for p-InGaAsP grown on InP. Jpn. J. Appl. Phys. , 109 - 113
-
4)
- B. Sermage , H.J. Eichler , J.P. Heritage , R.J. Nelson , N.K. Dutta . Photoexcited carrier lifetime and Auger recombination in 1.3 μm InGaAsP. Appl. Phys. Lett. , 259 - 261
-
5)
- C.H. Henry , B.F. Levine , R.A. Logan , C.G. Bethea . Minority carrier lifetime and luminescence efficiency of 1.3 μm InGaAsP-InP double heterostructure layers. IEEE J. Quantum Electron. , 905 - 912
-
6)
- M.M. Tashima , L.W. Cook , G.E. Stillmann . Minority carrier diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs. J. Electron. Mater. , 831 - 846
-
7)
- V. Diadiuk , S.H. Groves , C.A. Armiento , C.E. Hurwitz . Diffusion length of holes in n-InP. Appl. Phys. Lett. , 892 - 894
-
8)
- D.Z. Garbuzov , A.T. Gorelenok , V.N. Mdivani , M.K. Trukan , V.P. Chalyi , V.V. Agaev . Lifetimes of nonequilibrium carriers and reemission of luminescence in InGaAsP hetero-structures. Sov. Phys. Semicond. , 218 - 221
-
9)
- A. Tamura , K. Oka , M. Inoue , J. Shirafuji , Y. Inuishi . Characterisation of InxGa1−xAs1−yPy epitaxial layers and relation to lattice matching. Jpn. J. Appl. Phys. , 479 - 482
-
10)
- R. Trommer , J. Bauer , L. Hoffmann , H. Huber , W. Kunkel , G. Meier , H. Schäfer . Planar small-area InGaAs/InP photodiodes for wavelengths of 1.3 μm and 1.55 μm. Siemens Forsch. und Entwickungsber , 280 - 283
-
11)
- C.H. Henry , R.A. Logan , F.R. Merritt , C.G. Bethea . Radiative and nonradiative lifetimes in n-type and p-type 1.6 μm InGaAs. Electron. Lett. , 358 - 359
-
12)
- H. Holloway . Peripheral electron-beam induced current response of a shallow p-n junction. J. Appl. Phys. , 3669 - 3675
-
1)
Related content