High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

Author(s): A. Larsson ; M. Mittelstein ; Y. Arakawa ; A. Yariv
DOI: 10.1049/el:19860054

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Author(s): A. Larsson ¹ ; M. Mittelstein ¹ ; Y. Arakawa ¹ ; A. Yariv ¹
- Affiliations: 1: Department of Applied Physics, California Institute of Technology, Pasadena, USA
Source: Volume 22, Issue 2, 16 January 1986, p. 79 – 81
DOI: 10.1049/el:19860054 , Print ISSN 0013-5194, Online ISSN 1350-911X

Broad-area single-quantum-well graded-index waveguide separate-confinement heterostructure lasers were fabricated by molecular beam epitaxy. A high external quantum efficiency of 79% and stable, single-lobed far-field patterns with a beam divergence as narrow as 0.8° (1.9 times diffraction limit) for a 100 μm-wide laser were obtained under pulsed conditions.

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High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

High-efficiency broad-area single-quantum-well lasers with narrow single-lobed far-field patterns prepared by molecular beam epitaxy

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