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Measurement of linewidth broadening factor in gain-switched InGaAsP injection lasers by CHP method

Measurement of linewidth broadening factor in gain-switched InGaAsP injection lasers by CHP method

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© The Institution of Electrical Engineers
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First measurements of the semiconductor laser linewidth broadening factor α using a recently proposed CHP (chirp-halfwidth product) method are reported. Gain-switched optical pulses have been generated by sinusoidal RF and comb generator drive. The simultaneous recording of streak-camera and monochromator traces provides the required data for determination of α. The values of α between 6 and 7.5 are obtained for a 1.3 μm mesa laser. Computer simulations predict that the CHP formula should provide an estimate of α within ±15% for either comb generator or hard sinusoidal drive.

Inspec keywords: gallium arsenide; optical modulation; III-V semiconductors; semiconductor junction lasers; spectral line breadth; laser variables measurement; indium compounds

Other keywords: gain switched optical pulses; 1.3 micron wavelength; CHP method; computer simulation; laser variables measurement; chirp-halfwidth product; 1 GHz laser modulation; monochromator traces; mesa laser; III-V semiconductors; InGaAsP injection lasers; linewidth broadening factor; comb generator drive; semiconductor laser; sinusoidal RF

Subjects: Semiconductor lasers; Lasing action in semiconductors; Laser beam interactions and properties; Laser beam modulation, pulsing and switching; mode locking and tuning; Laser beam characteristics and interactions

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