@ARTICLE{ iet:/content/journals/10.1049/el_19850673, author = {R.A. Soref}, author = {J.P. Lorenzo}, keywords = {intrinsic Si layer;integrated-optical components;semiconductor;heavily doped Si substrate;epitaxial layers;wavelengths 1.6 microns;end-fire coupling;active components;intersecting channel waveguides;single crystal Si;optical power divider;plasma-etching;wavelength 1.3 microns;}, ISSN = {0013-5194}, language = {English}, abstract = {The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.}, title = {Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components}, journal = {Electronics Letters}, issue = {21}, volume = {21}, year = {1985}, month = {October}, pages = {953-954(1)}, publisher ={Institution of Engineering and Technology}, copyright = {© The Institution of Electrical Engineers}, url = {https://digital-library.theiet.org/;jsessionid=1mnfhdls3qlnp.x-iet-live-01content/journals/10.1049/el_19850673} }