Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components
The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.
- Fan, H.Y., Shepherd, M.L., Spitzer, W.: `Infrared absorption and energy band structure of germanium and silicon', Photo conductivity conference, 4 November 1954, Atlantic City, John Wiley & Sons., p. 184–203
- Swimm, R.T.: `Optical absorption in the band gap of high-purity silicon', Proceedings of conference of basic properties of optical materials, 7 May 1985, Gaithersburg, p. 158–159
- Moss, T.S.: , Optical properties of semi-conductors, 1959, (Butterworths Scientific Publications), p. 114-119
- Mikami, O., Nakagome, H.: `Waveguided optical switch in InGaAsP/InP using free carrier plasma dispersion', Electron. Lett., 1984, 20, p. 228-229