Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

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© The Institution of Electrical Engineers
Published 20/07/2012

Abstract

The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.

Inspec keywords: silicon; elemental semiconductors; integrated optics; semiconductor epitaxial layers; optical waveguide components

Other keywords: intrinsic Si layer; semiconductor; integrated-optical components; heavily doped Si substrate; epitaxial layers; wavelengths 1.6 microns; end-fire coupling; active components; intersecting channel waveguides; optical power divider; single crystal Si; plasma-etching; wavelength 1.3 microns

Subjects: Integrated optics; Optical waveguides; Integrated optics; Optical waveguides and couplers

References

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      • Moss, T.S.: , Optical properties of semi-conductors, 1959, (Butterworths Scientific Publications), p. 114-119
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