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access icon free Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

Abstract

The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.

References

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      • Swimm, R.T.: `Optical absorption in the band gap of high-purity silicon', Proceedings of conference of basic properties of optical materials, 7 May 1985, Gaithersburg, p. 158–159.
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      • T.S. Moss . (1959) , Optical properties of semi-conductors.
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      • O. Mikami , H. Nakagome . Waveguided optical switch in InGaAsP/InP using free carrier plasma dispersion. Electron. Lett. , 228 - 229

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content/journals/10.1049/el_19850673
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