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Platinum intermetallic resistors for GaAs-based circuits

Platinum intermetallic resistors for GaAs-based circuits

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A simple technique for making intermetallic resistors of sheet resistance around 25 Ω/□ is described. The resistors were formed by reacting a 300 Å film of platinum with underlying GaAs to completion. PtGa, PtGa2 and PtAs2 phases were identified in the temperature range of 450°C to 550°C investigated. The temperature coefficient of resistivity was of the order of +9.2×10−4°C−1 at 25°C and the resistors appeared to be stable up to current densities of 105 A/cm2.

References

    1. 1)
      • Toyida, N., Mochizuki, M., Mizoguchi, T., Nii, R., Hojo, A.: `An application of Pt-GaAs reaction to GaAs ICs', Proc. int. symp. on GaAs and related compounds, 1981, Japan, 63, p. 521–526, Inst. Phys. Conf. Ser..
    2. 2)
      • S.P. Murarka . High temperature stability of AuPt/n-GaAs Schottky barrier diodes. Solid-State Electron. , 869 - 876
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