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Improved high-temperature performance of 1.52 (μm InGaAsP laser diodes fabricated by two-step VPE and LPE

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Abstract

Continuous-wave operation up to 115°C has been achieved in 1.52 μm InGaAsP double-channel planar-buried-heterostructure laser diodes using two-step VPE and LPE. The high-temperature operation has been found attributable to the reduction in the leakage current bypassing the active region.

References

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content/journals/10.1049/el_19850210
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