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High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz

High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHz

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Published

High-power and high-efficiency InP Gunn diodes which were made from wafers grown by LP-MOCVD have been developed in the millimetre-wave range. Average power levels in excess of 50 mW were obtained at 94 GHz with an efficiency of 3%, while an optimised structure operating at 75 mW has been obtained with an efficiency of 2.4%.

Inspec keywords: solid-state microwave devices; Gunn diodes; indium compounds; vapour phase epitaxial growth; III-V semiconductors

Other keywords: InP; LP-MOCVD; solid-state microwave devices; MM wave oscillators; Gunn diodes; III-V semiconductors; chemical vapour deposition; millimetre-wave range; low pressure metalorganic CVD; high-efficiency devices; 94 GHz; high-power operation

Subjects: Solid-state microwave circuits and devices; Epitaxial growth; Bulk effect devices

References

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      • M.R. Friscourt , P.A. Rolland . Optimum design of N+-N-N+ InP in the millimeter range frequency limitation—RF performances. IEEE Electron Device Lett. , 135 - 137
    2. 2)
      • Corlett, R.: `Indium phosphide CW transferred electron amplifiers', 24, Inst. Phys. Conf. Series, 1975, Chap. 2.
    3. 3)
      • FANK, F. B.: ‘High effiency InP millimeter-wave oscillators and amplifiers’. EMC 1984.
    4. 4)
      • M.A. di Forte-Poisson , C. Brylinski . The growth of ultrapure and Si doped InP by low pressure metallorganic chemical vapor deposition. Appl. Phys. Lett.
    5. 5)
      • J.D. Crowley . High efficiency 90 GHz InP Gunn oscillators. Electron. Lett. , 705 - 706
    6. 6)
      • R.J. Hamilton . InP Gunn-effect devices for millimeter-wave amplifers and oscillators. IEEE Trans. , 775 - 780
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