Simulation of GaAs submicron FET with hot-electron injection structure
Two-dimensional Monte Carlo simulation of a 0.25 μm-long GaAs FET with an (Al, Ga)As/GaAs heterojunction source is reported for the first time. The mean electron velocity reaches above 7 × 107 (cm/s) in the channel, and extremely high values of Id = 11 (mA/20 μm) and gm = 1250 (mS/mm) are obtained. The unity-current-gain frequency fr is found to reach about 250 GHz.
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