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Planar structure AlGaAs/GaAs pin photodiode grown by MOCVD

Planar structure AlGaAs/GaAs pin photodiode grown by MOCVD

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© The Institution of Electrical Engineers
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A planar structure AlGaAs/GaAs PIN photodiode was fabricated by first using MOCVD. The p+-region was formed by Zn-diffusion in a high-resistivity AlGaAs window layer. The internal quantum efficiency, close to unity, and the cut-off frequency, as high as 1.2 GHz, have been demonstrated by 280 μm diameter devices.

Inspec keywords: aluminium compounds; III-V semiconductors; gallium arsenide; CVD coatings; photodiodes

Other keywords: cut-off frequency; metalorganic chemical vapour deposition; internal quantum efficiency; planar structure; MOCVD; high-resistivity AlGaAs window layer; semiconductor; AlGaAs/GaAs p-i-n photodiode; Zn-diffusion

Subjects: Photoelectric devices

References

    1. 1)
      • J. Novák , M. Morvic , P. Kordoś . High gain (P)AlGaAs-(N)GaAs heterojunction avalanche photodiodes. Solid-State Electron. , 82 - 83
    2. 2)
      • W. Eickhoff , P. Marschall , E. Schlosser . Transparent, highly sensitive GaAs/(GaAl)As photodiode. Electron. Lett. , 493 - 494
    3. 3)
      • H.D. Law , K. Nakano , L.R. Tomasetta . State-of-the-art performance of GaAlAs/GaAs avalanche photodiodes. Appl. Phys. Lett. , 180 - 182
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