Localisation of defects on SOI films via selective recrystallisation using halogen lamps
Localisation of defects on SOI films via selective recrystallisation using halogen lamps
- Author(s): D. Bensahel ; M. Haond ; D.P. Vu ; J.P. Colinge
- DOI: 10.1049/el:19830316
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- Author(s): D. Bensahel 1 ; M. Haond 1 ; D.P. Vu 1 ; J.P. Colinge 1
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View affiliations
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Affiliations:
1: Centre National d'Etudes des Télécommunications, Meylan, France
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Affiliations:
1: Centre National d'Etudes des Télécommunications, Meylan, France
- Source:
Volume 19, Issue 13,
23 June 1983,
p.
464 – 466
DOI: 10.1049/el:19830316 , Print ISSN 0013-5194, Online ISSN 1350-911X
Selective annealing by means of an incoherent light system has been employed to grow single-crystal Si on oxide. This technique allows control of the location of the remaining defects (subgrain boundaries) in the <100> recrystallised film.
Inspec keywords: semiconductor growth; recrystallisation annealing; silicon; semiconductor-insulator boundaries; elemental semiconductors; grain boundaries
Other keywords:
Subjects: Growth from solid phases; Elemental semiconductors; Metal-insulator-semiconductor structures; Thin film growth and epitaxy; Cold working, work hardening; post-deformation annealing, recovery and recrystallisation; textures
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