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Effect of electric fields on long-wavelength response of infra-red detectors

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Abstract

The effect of electric fields on extrinsic semiconductor infrared-detector response at low temperatures is examined quantitatively at wavelengths beyond the zero-field cutoff. General formulas are presented along with numerical results for Si:P and Si:In. These results illustrate the possibility of narrow-bandwidth detection and electronically modulated response.

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content/journals/10.1049/el_19830199
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