Fast photoconductive GaAs detectors made by laser stimulated MOCVD
Fast photoconductive GaAs detectors made by laser stimulated MOCVD
- Author(s): W. Roth ; H. Schumacher ; H. Beneking
- DOI: 10.1049/el:19830100
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- Author(s): W. Roth 1 ; H. Schumacher 1 ; H. Beneking 1
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View affiliations
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Affiliations:
1: Institute of Semiconductor Electronics, Aachen Technical University, Aachen, West Germany
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Affiliations:
1: Institute of Semiconductor Electronics, Aachen Technical University, Aachen, West Germany
- Source:
Volume 19, Issue 4,
17 February 1983,
p.
142 – 143
DOI: 10.1049/el:19830100 , Print ISSN 0013-5194, Online ISSN 1350-911X
Photoconductive detectors with rise times less than 10 ps have been made from GaAs grown by laser-stimulated MOCVD. The growth temperature was 450°C, and laser pulse energy and pulse repetition frequency were 120 mJ and 10 Hz, respectively.
Inspec keywords: chemical vapour deposition; semiconductor growth; electric sensing devices; III-V semiconductors; photoconducting devices; photodetectors; gallium arsenide
Other keywords:
Subjects: Semiconductor technology; Chemical vapour deposition; Detection of radiation (bolometers, photoelectric cells, i.r. and submillimetre waves detection); Chemical vapour deposition; Photodetectors; Photoelectric devices; II-VI and III-V semiconductors
References
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1)
- H.J. Klein , D. Bimberg , H. Beneking , J. Kuhl , E.O. Goebel . High peak power picosecond light pulses from a directly modulated semiconductor laser. Appl. Phys. Lett. , 394 - 396
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- H.J. Klein , D. Bimberg , H. Beneking . Ultrafast thin films GaAs photoconductive detectors. Thin solid Films , 273 - 279
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- J.G. Gammel , H. Ohno , J.M. Ballantyne . High speed photo-conductive detectors using GaInAs. IEEE J. Quantum Electron. , 269 - 272
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- H. Beneking . On the response behaviour of fast photoconductive optical planar and coaxial semiconductor detectors. IEEE Trans. , 1431 - 1441
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5)
- Roth, W., Kräutle, H., Krings, A., Beneking, H.: Talk given at the MRS Annual Meeting, 1–5 November 1982, Boston.
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- D.H. Auston , A.M. Johnson , P.R. Smith , J.G. Bean . Picosecond optoelectric detection, sampling and correction measurements in amorphous semiconductor. Appl. Phys. Lett. , 371 - 373
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