Monte Carlo particle simulation of a GaAs short-channel MESFET

Monte Carlo particle simulation of a GaAs short-channel MESFET

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A Monte Carlo particle simulation of a 0.25 μm-long gate (and 0.25 μm-long channel) GaAs MESFET having a practical doping density and sitting on a substrate is carried out. Extremely high values of gm and Idss of 643 mS/mm and 5.35 mA/20 μm were obtained. The near-ballistic nature of the electron transport in the FET was confirmed.


    1. 1)
      • Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode
    2. 2)
      • Monte Carlo simulation of GaAs submicron n+-i(n)-n+ diode
    3. 3)
      • Monte-Carlo simulation of space-charge injection FET
    4. 4)
      • Temperature dependence of the transport properties of gallium arsenide determined by a Monte Carlo method
    5. 5)
      • Hockney, R.W.: `POT4—a fast direct Poisson-solver for the rectangle allowing some mixed boundary conditions and internal electrodes', RC-2870, IBM Res. report,
    6. 6)
      • Matsumoto, K., Hashizume, N., Atoda, N., Tomizawa, K., Kurosu, T., Iida, M.: `Submicron-gate self-aligned GaAs FET by ion implantation', Presented at the Symposium on gallium arsenide and related compounds, 1982, D-1, Albuquerque USA
    7. 7)
      • Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs
    8. 8)
      • Computer simulation of gallium arsenide field-effect transistors using Monte-Carlo methods
    9. 9)
      • A unipolar “field-effect” transistor

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