InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current
Using a new LPE growth technique, an InGaAsP/InP planar buried heterostructure laser diode (PBH-LD) has been realised in 1.3 and 1.5 μm wavelength regions. As a result of the effective carrier confinement, CW threshold currents as low as 8.5 mA and 13 mA have been obtained in 1.3 and 1.5 μm PHB-LDs, respectively, at room temperature.
- Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
- InP/GaInAsP buried heterostructure lasers of 1.5 μm region
- Low threshold InGaAsP/InP buried crescent laser with double current confinementstructure
- Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 μm wavelength