Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Mn as a p-type dopant in In0.53Ga0.47As on InP substrates

Mn as a p-type dopant in In0.53Ga0.47As on InP substrates

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Mn has been used as a p-type dopant in LPE In0.53Ga0.47As. The distribution coefficient was measured as 0.6 and the activation energy was 52.5±2.5 meV. The room temperature mobility varied from 183 to 94 cm2 V−1s−1 in the concentration range studied. A solid to solid diffusion coefficient of 2.6×10−12 cm2 s−1 was estimated for Mn into the substrate at 640°C.

References

    1. 1)
      • Y. Takeda , M. Kuzuhara , A. Sasaki . Properties of Zn-doped p-type In0.53Ga0.47As on InP substrate. Jpn. J. Appl. Phys. , 899 - 903
    2. 2)
      • J.C. Campbell , A.G. Dentai , C.A. Burrus , J.F. Ferguson . InP/InGaAs heterojunction phototransistors. IEEE J. Quantum Electron. , 264 - 269
    3. 3)
      • S.B. Phatak , S.M. Bedair , S. Fujita . Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy. Solid-State Electron. , 839 - 844
    4. 4)
      • Pearsall, T.P., Beuchet, G., Hirtz, J.P., Visentin, N., Bonnet, M., Roizes, A.: `Electron and hole mobilities in Ga', Proceedings of the eighth international symposium on gallium arsenide and related compounds, 1980, Vienna, p. 639–649.
    5. 5)
      • L. Gouskov , S. Bilac , J. Pimentel , A. Guskov . Fabrication and electrical properties of epitaxial layers of GaAs doped with manganese. Solid-State Electron. , 653 - 656
    6. 6)
      • E. Kuphal . Preparation and characterization of LPE InP. J. Crystal Growth , 117 - 126
    7. 7)
      • M. Kurihara , T. Moriizumi , K. Takahashi . Ge-doped InxGa1−xAs p-n junctions. Solid-State Electron. , 763 - 771
    8. 8)
      • E.W. Williams , W. Elder , M.G. Astles , M. Webb , J.B. Mullin , B. Straughan , P.J. Tufton . Indium phosphide. J. Electrochem. Soc. , 1741 - 1749
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19810510
Loading

Related content

content/journals/10.1049/el_19810510
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address