Mn as a p-type dopant in In0.53Ga0.47As on InP substrates
Mn has been used as a p-type dopant in LPE In0.53Ga0.47As. The distribution coefficient was measured as 0.6 and the activation energy was 52.5±2.5 meV. The room temperature mobility varied from 183 to 94 cm2 V−1s−1 in the concentration range studied. A solid to solid diffusion coefficient of 2.6×10−12 cm2 s−1 was estimated for Mn into the substrate at 640°C.