High efficiency InP transferred electron device for high peak power, high mean power pulsed sources in J-band
High efficiency indium transferred electron pulsed diodes have been shown to produce high peak powers simultaneously with moderately high mean power with DC to RF conversion efficiencies up to 22% at upper J-band frequencies. Devices have been combined in four-diode waveguide array circuits to produce powers of 40 W peak, 2 W mean simultaneously, and 64.5 W at lower duty cycle.
- Gray, K.W., Patteson, J.E., Rees, H.D., Prew, B.A., Clarke, R.C., Irving, L.D.: `Current limiting contacts for InP transferred electron devices', Proc. 5th Cornell Elect. Eng. Conf., 1975, p. 215
- Brookbanks, D.M., Myers, F.A.: `Cavity stabilised InP arrays', Proc. 6th Cornell Elect. Eng. Conf., 1977, p. 123
- Smith, D.C., Tebbenham, R.L.: `Fast rise time InP oscillators employing cavity stabilisation and pulsed priming techniques', Proc. 9th EMC, 1979, p. 538
- Brookbanks, D.M.: `Effect of thermal impedance on chirp characteristics of high efficiency pulsed InP oscillators', Electron. Lett., 1977, 13
- 1 onward links are available for this reference.
- Stevens, R., Tarrant, D., Myers, F.A.: `40 watt, 16 GHz pulsed Gunn diode oscillator', Proc. 4th EMC, 1974, p. 257