InP/InGaAsP avalanche photodiodes with new guard ring structure
InP/InGaAsP avalanche photodiodes with new guard ring structure
- Author(s): F. Osaka ; K. Nakazima ; T. Kaneda ; T. Sakurai ; N. Susa
- DOI: 10.1049/el:19800508
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- Author(s): F. Osaka 1 ; K. Nakazima 1 ; T. Kaneda 1 ; T. Sakurai 1 ; N. Susa 2
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View affiliations
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Affiliations:
1: Fujitsu Laboratories Ltd., Kawasaki, Japan
2: Musashino Electrical Communication Laboratory, NTT, Musashino, Japan
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Affiliations:
1: Fujitsu Laboratories Ltd., Kawasaki, Japan
- Source:
Volume 16, Issue 18,
28 August 1980,
p.
716 – 717
DOI: 10.1049/el:19800508 , Print ISSN 0013-5194, Online ISSN 1350-911X
A new guard ring structure for InP/InGaAsP avalanche photodiodes is described, which makes use of the impurity concentration difference between two InP epitaxial layers. The guard ring effect gives a low dark current and uniform multiplication characteristics at λ = 1.29 μm.
Inspec keywords: p-n heterojunctions; gallium arsenide; III-V semiconductors; avalanche photodiodes; indium compounds
Other keywords:
Subjects: Photoelectric devices; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
References
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