© The Institution of Electrical Engineers
Back-illuminated InP/InGaAs heterojunction phototransistors are described. These devices exhibit a low-level optical gain of 40 at 1 nW of incident power which represents a 1000 × improvement in sensitivity over previously reported phototransistors. The maximum gain is 1000 at 5 μW input. The response is relatively flat from 0.95 μm to 1.65 μm wavelength.
References
-
-
1)
-
A.G. Dentai ,
T.P. Lee ,
C.A. Burrus ,
E. Buehler
.
Small-area high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm.
Electron. Lett.
,
484 -
485
-
2)
-
Shockley, W.: 2569374, 1951, US patent.
-
3)
-
H. Kroemer
.
Theory of a wide-gap emitter for transistors.
Proc. IRE
,
1535 -
1537
-
4)
-
R.A. Milano ,
T.H. Windhorn ,
E.R. Anderson ,
G.E. Stillman ,
R.D. Dupuis ,
P.D. Dapkus
.
Al0.5Ga0.5As-GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition.
Appl. Phys. Lett.
,
562 -
565
-
5)
-
Alavi, K.T., Markunus, R.J., Fonstad, C.G.: `LPE-grown InGaAs/InP heterojunction bipolar phototransistor', Proceedings of 1979 international electron devices meeting, 1979, Washington, DC, p. 643.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19800506
Related content
content/journals/10.1049/el_19800506
pub_keyword,iet_inspecKeyword,pub_concept
6
6