Channelled substrate narrow stripe GaAs/(GaAl)As lasers with quarter-wavelength facet coatings

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Channelled substrate narrow stripe GaAs/(GaAl)As lasers with quarter-wavelength facet coatings

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Channelled substrate narrow stripe GaAs/(GaAl)As lasers with quarter-wavelength antireflection coatings are described. These devices have low thresholds, broad spectra, high external quantum efficiencies and operate up to 10 mW in the fundamental transverse mode.

Inspec keywords: III-V semiconductors; antireflection coatings; gallium arsenide; semiconductor junction lasers

Other keywords: 10 mW; quarter wavelength antireflection coatings; channelled substrate narrow stripe lasers; GaAs/(GaAl)As; semiconductor junction lasers

Subjects: Optical coatings; Design of specific laser systems; Lasing action in semiconductors; Optical coatings and filters; Semiconductor lasers

References

    1. 1)
      • P.A. Kirkby . Channelled substrate narrow stripe GaAs/GaAlAs injection lasers with extremely low threshold currents. Electron. Lett. , 824 - 826
    2. 2)
      • P.A. Kirkby , G.H.B. Thompson . Channelled substrate buried heterostructure GaAs/GaAlAs injection lasers. J. Appl. Phys. , 4578 - 4589
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