High efficiency 90 GHz InP Gunn oscillators

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High efficiency 90 GHz InP Gunn oscillators

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© The Institution of Electrical Engineers
Published

High efficiency InP Gunn devices and oscillators have been developed for the millimetre wave range. At approximately 90 GHz, the highest c.w. efficiency measured was 4.7% and the highest pulsed efficiency was 6.3%. Output powers of 126 mW c.w. and 236 mW pulsed have been achieved.

Inspec keywords: indium compounds; Gunn oscillators

Other keywords: 90 GHz; 4.7% continuous wave efficiency; InP; Gunn oscillators; 6.3% pulsed efficiency

Subjects: Oscillators; Solid-state microwave circuits and devices; Bulk effect devices

References

    1. 1)
      • B.K. Ridley . Anatomy of the transferred-electron effect in III–V Semiconductors. J. Appl. Phys. , 754 - 764
    2. 2)
      • W. Fawcett , D.C. Herbert . High-field transport in gallium arsenide and indium phosphide. J. Phys. C: Solid-State Phys. , 1641 - 1654
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