Channelled substrate lasers prepared by combination of organometallic pyrolysis and liquid-phase epitaxy

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Channelled substrate lasers prepared by combination of organometallic pyrolysis and liquid-phase epitaxy

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Channelled substrate planar (c.s.p.) GaAlAs-GaAs d.h. lasers with p-type blocking layers have been prepared using a combination of organometallic pyrolysis and liquid-phase epitaxy. The use of o.m.p. to prepare the channelled blocking layers allows the growth of thin first confining layers necessary for good mode control. Devices produced in this manner are both linear and single-mode to power levels in excess of 14 mW.

Inspec keywords: semiconductor growth; semiconductor junction lasers; III-V semiconductors; pyrolysis; gallium arsenide; aluminium compounds; vapour phase epitaxial growth; liquid phase epitaxial growth

Other keywords: III-V semiconductors; liquid phase epitaxy; organometallic pyrolysis; GaAlAs-GaAs; above 14 mW; channelled substrate lasers; semiconductor junction lasers; semiconductor growth; vapour phase epitaxy

Subjects: Deposition from liquid phases (melts and solutions); Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors; Chemical vapour deposition; Crystal growth from vapour; Epitaxial growth; Crystal growth from solution

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