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Redistribution of chromium in semi-insulating GaAs:Cr during laser annealing

Redistribution of chromium in semi-insulating GaAs:Cr during laser annealing

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© The Institution of Electrical Engineers
Published

Secondary ion mass spectrometry (s.i.m.s.) measurements on laser irradiated Cr-doped (semi-insulating) GaAs samples revealed a Cr redistribution effect near the surface region. The maximum depth at which redistribution is measured is shown to increase with increasing energy density from a Q-switched ruby laser, reaching a depth of ~1.4 μm for an energy density of 1.4 J/cm2. The redistribution is explained in terms of a zone refining process which occurs during the cooling cycle of the laser induced melted region.

Inspec keywords: annealing; gallium arsenide; III-V semiconductors; laser beam effects; chromium; impurity distribution

Other keywords: Cr redistribution effect; laser induced melted region; energy density; cooling cycle; Q-switched ruby laser; GaAs:Cr; laser annealing; surface region; zone refining process; secondary ion mass spectrometry measurements; Cr doped

Subjects: Laser applications; Impurity concentration, distribution, and gradients; Laser-surface impact phenomena; Other heat and thermomechanical treatments; II-VI and III-V semiconductors

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