© The Institution of Electrical Engineers
A simple circuit with a Schottky-barrier-gate Gunn device is presented, which works as a pulse regenerator and modulator for laser diodes. Modulation depth and bias voltages of both Gunn device and laser are separately adjustable, allowing quick adaption for different laser diodes. The circuit was tested with a p.c.m. word at 1.5 Gbit/s.
References
-
-
1)
-
T.L. Paoli
.
Modulation of diode lasers.
Laser Focus
,
54 -
57
-
2)
-
M. Dantelsen
.
A theoretical analysis for gigabit/second pulse code modulation of semiconductor lasers.
IEEE J. Quantum Electron.
,
657 -
660
-
3)
-
T.P. Lee ,
R.M. Derosier
.
Charge storage in injection lasers and its effect on high-speed pulse modulation of laser diode.
Proc. IEEE
,
1176 -
1177
-
4)
-
H. Yanai ,
M. Yano ,
T. Kamiya
.
Direct modulation of a double-heterostructure laser using a Schottky-barrier-gate Gunn-effect digital device.
IEEE J. Quantum Electron.
,
519 -
524
-
5)
-
U. Wellens
.
High-bit-rate pulse regeneration and injection-laser modulation using a diode circuit.
Electron. Lett.
,
529 -
530
-
6)
-
W. Freude ,
A. Buchholz
.
Inexpensive equipment for driving GaAs lasers with 100 ps risetime pulses.
Electron. Lett.
,
598 -
599
-
7)
-
W. Filensky ,
H.-J. Klein ,
H. Beneking
.
The GaAs MESFET as a pulse regenerator, amplifier, and laser modulator in the Gbit/s range.
IEEE J. Solid-State Circuits
,
276 -
280
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19790203
Related content
content/journals/10.1049/el_19790203
pub_keyword,iet_inspecKeyword,pub_concept
6
6