Zinc contamination and misplaced p-n junctions in InP–GaInPAs d.h. lasers
Zinc contamination and misplaced p-n junctions in InP–GaInPAs d.h. lasers
- Author(s): J.J. Coleman and F.R. Nash
- DOI: 10.1049/el:19780378
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- Author(s): J.J. Coleman 1 and F.R. Nash 1
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View affiliations
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Affiliations:
1: Bell Laboratories, Murray Hill, USA
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Affiliations:
1: Bell Laboratories, Murray Hill, USA
- Source:
Volume 14, Issue 17,
17 August 1978,
p.
558 – 559
DOI: 10.1049/el:19780378 , Print ISSN 0013-5194, Online ISSN 1350-911X
A serious problem involving the use of Zn in the formation of GaxIn1−xPyAs1−y double-heterostructure lasers is identified. Contamination of epitaxial layer solutions from Zn is shown to result in misplaced p-n junctions in these devices. The improvement in the laser characteristics of devices having correctly placed p-n junctions is demonstrated.
Inspec keywords: p-n heterojunctions; indium compounds; semiconductor junction lasers; gallium compounds; gallium arsenide; III-V semiconductors
Other keywords:
Subjects: Semiconductor lasers; Semiconductor junctions; Lasing action in semiconductors; Design of specific laser systems; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
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