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Optical silicon lifetime measurements in heavily doped diffused regions

Optical silicon lifetime measurements in heavily doped diffused regions

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© The Institution of Electrical Engineers
Published

Monochromatic visible light at various wavelengths was used to generate photocurrent in a silicon n+-p diffused diode. A numerical model which includes electric field, heavy doping band gap reduction and doping level mobility dependence was used with fitting techniques to determine the carrier lifetime in the n+-region at each wavelength.

Inspec keywords: p-n homojunctions; silicon; elemental semiconductors; photodiodes; carrier lifetime

Other keywords: n+-p diffused diode; heavy doping band gap reduction; doping level mobility dependence; photocurrent; n+-region; numerical model; heavily doped diffused regions; photodiode; optical Si lifetime measurements

Subjects: Electrical conductivity of elemental semiconductors; Photoconduction and photovoltaic effects; photodielectric effects; Elemental semiconductors; Photoelectric devices; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor junctions

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