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Avalanche-noise dependence on avalanche-photodiode structures

Avalanche-noise dependence on avalanche-photodiode structures

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© The Institution of Electrical Engineers
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Excess avalanche-photodiode noise is calculated by considering photogenerated diffusion currents and photogenerated carrier distributions. Computed results reveal the effects of junction depth, depletion-layer thickness and incident light direction on avalanche noise for various optical-absorption coefficients.

Inspec keywords: photodiodes; electron device noise; avalanche diodes

Other keywords: photogenerated carrier distributions; structure effects; excess avalanche photodiode noise; photogenerated diffusion currents; incident light direction effects; depletion layer thickness effects; noise calculation; junction depth effects; avalanche photodiodes

Subjects: Photoelectric devices; Junction and barrier diodes

References

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      • H. Kanbe , T. Kimura , Y. Mizushima . Wavelength-depcndcnce of multiplication noise in silicon avalanche photodiodes. IEEE Trans.
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      • K. Nishida , K. Ishii , K. Minemura , K. Taguchi . Double epitaxial silicon avalanche photodiodes for optical fiber communications. Electron. Lett. , 280 - 281
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      • R.J. Mcintyre . Multiplication noise in uniform avalanche diodes. IEEE Trans. , 164 - 168
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      • Melchior, H., Haptman, A.R.: `Epitaxial silicon n', Proceedings of international electron devices meeting, 1976.
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      • S.M. Sze , G. Gibbons . Avalanche breakdown voltages of abrupt and linearly graded p-n junctions in Ge, Si, GaAs and GaP. Appl Phys. Lett. , 111 - 113
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