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X-band TRAPATT amplifiers

X-band TRAPATT amplifiers

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© The Institution of Electrical Engineers
Published

A 2-stage, class-C. X-band pulsed trapatt amplifier has been demonstrated, giving a maximum gain of 9·5 dB over a 1 dB bandwidth of 200 MHz at a centre frequency of 9.4GHz. The trapatt diodes have a silicon p+–n–n+ structure with silver integral heatsinks and gold-button heat reservoirs. Single-stage amplifiers have been operated with input pulse widths of 0·5 μs and gains of 5 dB, with 11%3 dB bandwidths centred at 9·2 GHz.

Inspec keywords: TRAPATT diodes; solid-state microwave circuits; microwave amplifiers

Other keywords: class-C amplifiers; Si p+-n-n+ structures; 200 MHz bandwidth; trapatt diodes; two stage amplifier; performance; experimental results; integral Au button heat reservoirs; 9.4 GHz centre frequency; Ag integral heatsinks; X-band pulsed trapatt amplifier

Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes; Amplifiers

References

    1. 1)
      • C.H. Oxley , A.M. Howard , J.J. Purcell . Design and performance of TRAPATT devices, oscillators and amplifiers. Solid-Stale & Electron. Dev. , 1 , 24 - 30
    2. 2)
      • Grace, M.I.: `Broadband high-efficiency-mode amplifiers at S-band', Proceedings of European microwave conference, 1971.
    3. 3)
      • A. Rosen , I.E. Reynolds , S.L. Liu , G.E. Theriault . Wideband class-C TRAPATT amplifiers. RCA Rev. , 729 - 736
    4. 4)
      • A.M. Howard , S.M.R. Gordon , J.J. Purcell . Design and fabrication of X-band silicon TRAPATT diodes. IEE Colloquium on trapatt diodes and circuits
    5. 5)
      • W.J. Evans . Circuits for high-efficiency avalanche díode oscillators. IEEE Trans. , 1060 - 1067
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