Small-signal subthreshold model for i.g.f.e.t.s

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Small-signal subthreshold model for i.g.f.e.t.s

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© The Institution of Electrical Engineers
Published

Theoretical considerations supported by practical measurements indicate that the small-signal low-frequency behaviour of i.g.f.e.t.s, operating with a significant VDS bias and 1 nA < ID < 1μA, can be represented by a simple model.

Inspec keywords: semiconductor device models; field effect transistors

Other keywords: IGFET; small signal subthreshold model

Subjects: Other field effect devices; Semiconductor device modelling, equivalent circuits, design and testing

References

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