Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Simple method of measuring drift-mobility profiles in thin semiconductor films

Simple method of measuring drift-mobility profiles in thin semiconductor films

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

A simple method of measuring drift-mobility profiles in semiconductor films is described. It is based on the low-frequency measurement of the transconductance and gate capacitance of an f.e.t. structure as a function of gate bias. Drift mobilities of 4000 to 5000 cm2/Vs have been measured on n-type GaAs films with 1016 to 1017 cm−3 doping levels.

Inspec keywords: field effect transistors; semiconductor thin films; carrier mobility

Other keywords: low frequency measurement; gate capacitance; drift mobility measurement; transconductance; thin semiconductor films

Subjects: Low-field transport and mobility; piezoresistance (semiconductors/insulators); Electronic properties of semiconductor thin films; Electrical properties of metal-insulator-semiconductor structures; Other field effect devices; Metal-insulator-semiconductor structures

References

    1. 1)
      • W.C. Johnson , P.T. Panonsis . The influence of Debye length on the C – V measurement of doping profiles. IEEE Trans. , 965 - 973
    2. 2)
      • K. Lehovec . Determination of impurity and mobility distributions in epitaxial semiconducting films on insulating substrates by C – V and Q – V analysis. Appl. Phys. Lett. , 279 - 281
    3. 3)
      • Lehovec, K., Zuleeg, R.: `Mobility, dopant, and carrier distributions at the interface between semiconducting and semiinsulating gallium arsenide', Proceedings of 5th international symposium on GaAs and related compounds, 1975, Institute of Physics, , p. 292–306.
    4. 4)
      • J.D. Wiley , G.L. Miller . Series resistance effects in semiconductor C – V profiling. IEEE Trans. , 265 - 272
    5. 5)
      • L.J. van der Pauw . A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep. , 1 - 9
    6. 6)
      • R.A. Pucel , H.A. Haus , H. Statz . (1975) Signal and noise properties of gallium arsenide microwave field-effect transistors, Advances in electronics and electron physics, 38.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19760186
Loading

Related content

content/journals/10.1049/el_19760186
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address