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GaAs varactor diode for u.h.f. t.v. tuners

GaAs varactor diode for u.h.f. t.v. tuners

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© The Institution of Electrical Engineers
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The design and fabrication of a GaAs varactor diode for u.h.f. t.v. tuners were carried out using a GaAs double epitaxial layer. The capacitance ratio of diode. C3/C25, is 6.0 and the series resistance at 470 MHz is 0.24 ω. These characteristics are much better than those of an Si diode and well satisfy the requirements for t.v. tuners.

Inspec keywords: tuning; varactors; television receivers

Other keywords: GaAs varactor diode; UHF; fabrication; TV tuners; design

Subjects: Junction and barrier diodes; Radio and television receivers

References

    1. 1)
      • G. Adam . Junction capacitance switches. IEEE Trans. , 51 - 58
    2. 2)
      • E.D. Lawrence . Spreading resistance as a function of frequency. IEEE Trans. , 101 - 109
    3. 3)
      • Mihara Minoru , Toyoda Nobuyuki , Hara Tohru . Liquid-phase epitaxial growth of thin GaAs layers from supercooled solutions. Appl. Phys. Lett. , 131 - 133
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