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Fabrication of 3-terminal transferred-electron logic devices by proton bombardment for device isolation

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Abstract

Proton bombardment has been used to convert n GaAs into high-resistivity material. This technique is used for isolating coplanar transferred-electron logic (t.e.l.) devices. The d.c. transfer characteristics of these devices show about 20% current drop. Preliminary experiments indicate that the device propagation delay is of the order of 50 ps.

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content/journals/10.1049/el_19750153
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