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Transit modes of InP transferred-electron devices

Transit modes of InP transferred-electron devices

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© The Institution of Electrical Engineers
Published

The characteristics of accumulation transit oscillations in InP n+-n-n+ transferred-electron oscillators and the dependence of device efficiency on the injection properties of the cathode contact have been analysed by computer simulation.

Inspec keywords: electronics applications of computers; transferred electron devices

Other keywords: injection properties; computer simulation; accumulation transit oscillations; InP transferred electron devices; transit modes; cathode contact

Subjects: Electronic engineering computing; Bulk effect devices

References

    1. 1)
      • D. Jones , H.D. Rees . Accumulation transit mode in transferred-electron oscillators. Electron. Lett. , 566 - 567
    2. 2)
      • D. Jones , H.D. Rees . Overlength modes of InP transferred-electron devices. Electron. Lett. , 234 - 235
    3. 3)
      • B.A. Prew . Determination of the velocity/field characteristic for n-type indium phosphide from dipole-domain measurements. Electron. Lett. , 592 - 594
    4. 4)
      • D.J. Colliver , L.D. Irving , J.E. Pattison , H.D. Rees . High-efficiency InP transferred-electron oscillators. Electron. Lett. , 221 - 222
    5. 5)
      • P.M. Boers . Measurements of the velocity/field characteristic of indium phosphide. Electron. Lett. , 625 - 626
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