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A new vertical-channel silicon m.o.s.t.configuration has exhibited a high average current density (1000 A/cm2), a high periphery/output-area ratio (0.2 μm−1), and a high-current capability (160 μA/μm), consistent with high power-frequency performance. Experimental state-of-the-art results include 1.2 W r.f.at 0.7 GHz and a device fmax of 2.1 GHz.
Inspec keywords: field effect transistors; power transistors; solid-state microwave devices; microwave amplifiers; power amplifiers
Other keywords:
Subjects: Amplifiers; Other field effect devices; Solid-state microwave circuits and devices