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High-efficiency proton-isolated GaAs IMPATT diodes

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Abstract

The fabrication and c.w. operation of planar proton-isolated diffused junction and Schottky-barrier GaAs IMPATT diodes are described. The diodes have shown a maximum efficiency of 13.5% and output power of 315 mW in the Q band. Planar diodes appear to be superior to mesa devices formed from identical material.

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