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Tungsten masking against boron implantation

Tungsten masking against boron implantation

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  • Author(s): W.M. Portnoy 1  and  L.M. Leedy 2
    • View affiliations
    • Affiliations: 1: Department of Electrical Engineering, Texas Technical University, Lubbock, USA
      2: Department of Electrical Engineering, Hughes Research Laboratories, Malibu, USA
  • Source: Volume 9, Issue 6, 22 March 1973, p. 129 – 130
    DOI:  10.1049/el:19730095 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published

Electron-beam evaporated and ion-beam sputtered films have been successfully used as masks against high-dosage boron implantation. Evaporated films were found to be somewhat more effective, probably because of their higher density. The predicted value for the required mask thickness was in satisfactory agreement with the experimentally determined value.

Inspec keywords: silicon; masks; tungsten; boron; metallic thin films; ion implantation

Other keywords: W metal films; masks; B; ion implantation; Si

Subjects: Methods of thin film deposition; Semiconductor technology; Thin film growth and epitaxy

References

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      • E.D. Wolf , L.O. Bauer , R.W. Bower , H.L. Garvin , C.R. Buckey . Electron beam and ion beam fabricated microwave switch. IEEE Trans. , 446 - 449
    2. 2)
      • G. Baccarani , K.A. Pickar . Range and straggle of boron in photoresist. Solid-Slate Electron. , 239 - 243
    3. 3)
      • L.O. Bauer , M.R. MacPherson , A.T. Robinson , H.G. Dill . Properties of silicon implanted with boron ions through thermal silicon dioxide films. Solid-Slate Electron.
    4. 4)
      • D.M. Brown , W.E. Engeler , M. Garfinkel , P.V. Gray . Refractory metal silicon device technology. Solid-Slate Electron. , 1105 - 1112
    5. 5)
      • D.M. Brown , W.R. Cady , J.W. Sprague , P.J. Salragni . The p-channel refractory metal self-registered MOSFET. IEEE Trans. , 931 - 940
    6. 6)
      • H.G. Dill , R.W. Bower , T.M. Toombs . Ion-implanted MOS technology. Radiat. Eff. , 45 - 57
    7. 7)
      • W.S. Johnson , J.F. Gibbons . (1969) , Projected range statistics in semiconductors.
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