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New measurement method of Gunn-diode impedance

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Abstract

Using a suitably designed cavity, the negative conductance of X band Gunn diodes is derived from oscillation buildup characteristics when a steep bias voltage step is applied. By this method, a quick assessment of the diode negative conductance as a function of r.f. voltage amplitudes can be made.

References

    1. 1)
      • D.D. Khandewal , W.R. Curtice . A study of the single-frequency quenched-domain mode Gunn-effect oscillator. IEEE Trans. , 178 - 187
    2. 2)
      • J.C. Slater . (1950) , Microwave electronics.
    3. 3)
      • R.P. Owens , D. Cawsey . Microwave equivalent-circuit parameters of Gunn-effect-device packages. IEEE Trans. , 790 - 798

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