New measurement method of Gunn-diode impedance
Using a suitably designed cavity, the negative conductance of X band Gunn diodes is derived from oscillation buildup characteristics when a steep bias voltage step is applied. By this method, a quick assessment of the diode negative conductance as a function of r.f. voltage amplitudes can be made.
- A study of the single-frequency quenched-domain mode Gunn-effect oscillator
- , Microwave electronics
- Microwave equivalent-circuit parameters of Gunn-effect-device packages