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Space-charge wave instability in a semiconductor exhibiting field-dependent diffusion coefficient and saturated drift velocity

Space-charge wave instability in a semiconductor exhibiting field-dependent diffusion coefficient and saturated drift velocity

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It is shown that, in a semiconductor biased in the saturation region, the combination of a field-dependent diffusion coefficient with a gradient in the steady-state electric-field distribution may lead to space-charge wave amplification.

References

    1. 1)
      • D.M. Chang , J.G. Ruch . Measurement of the velocity/field characteristic of electrons in germanium. Appl. Phys. Lett.
    2. 2)
      • W.P. Dumke . On a current instability resulting from the diffusion of hot electrons. Appl. Phys. Lett.
    3. 3)
      • B.W. Hakki . Amplification in two-valley semi-conductors. J. Appl. Phys. , 808 - 818
    4. 4)
      • P.N. Robson , G.S. Kino , B. Fay . Two-port microwave amplification in long samples of gallium arsenide. IEEE Trans. , 612 - 615
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