Two-point boundary-value problems in theories of space-charge conduction

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Two-point boundary-value problems in theories of space-charge conduction

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© The Institution of Electrical Engineers
Published

A computational technique is described which overcomes numerical difficulties reported previously in the literature in the solution of time-independent space-charge conduction problems that involve three dependent variables. By way of illustration, results are presented for a model describing electron injection into a ptype semiconductor.

Inspec keywords: semiconductor devices; space charge

Subjects: Semiconductor theory, materials and properties

References

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      • M.A. Lampert . Injection in insulators: A regional approach. Bull. Amer. Phys. Soc.
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      • J.R. MacDonald . Accurate solution of an idealized one carrier metal-semiconductor junction problem. Solid-State Electronics , 11 - 37
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      • W. Shockley , R.C. Prim . Space charge limited emission in semi-conductors. Phys. Rev. , 753 - 758
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      • A.K. Jonscher . (1960) , Principles of semiconductor device operation.
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      • R.H. Tredgold . (1966) , Space charge conduction in solids.
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      • G.G. Roberts . Equilibrium space charge distributions in semiconductors. Brit. J. Appl. Phys. , 749 - 753
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      • G.G. Roberts , R.H. Tredgold . Space charge injection into impurity semiconductors I and II. J. Phys. Chem. Solids , 1263 - 1270
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