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Characteristics of hetero-structured thermoelectric devices with a-Si/Mg2Si-stacked thin film layers

Characteristics of hetero-structured thermoelectric devices with a-Si/Mg2Si-stacked thin film layers

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New high-quality thermoelectric devices with amorphous silicon/magnesium silicide (a-Si/Mg2Si)-stacked hetero-structure thin film layers have been fabricated using both radio frequency sputtering and rapid thermal annealing techniques. The thermoelectric properties of the a-Si/Mg2Si hetero-structure layers were found to be much superior to those of the a-Si layer.

http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.6352
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