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Broadband on-chip contact pad to microstrip transition with low loss in SiGe BiCMOS technology

Broadband on-chip contact pad to microstrip transition with low loss in SiGe BiCMOS technology

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A broadband, compact on-chip contact pad to microstrip transition for use in silicon (Si) based technologies operating up to 330 GHz has been investigated and fabricated. The pad is designed as a short coplanar waveguide structure to concentrate the electrical field in the narrow gap between signal and ground pads, thus eliminating the need for a substrate shield while preserving low interaction with the lossy silicon substrate. The working principle is confirmed by electromagnetic field simulations using a detailed model of a high-frequency measurement probe, which allows to investigate the field distribution with a realistic excitation source. The fabricated test structure with two transitions in a back-to-back configuration shows excellent broadband properties and insertion loss below 4.2 dB up to 330 GHz, making the proposed structure well suited for millimetre-wave applications.

References

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      • 4. Pfeiffer, U.: ‘Low-loss contact pad with tuned impedance for operation at millimeter wave frequencies’. Proc. 9th IEEE Workshop on Signal Propagation on Interconnects, Garmisch-Partenkirchen, Germany, May 2005, pp. 6164, doi: 10.1109/SPI.2005.1500898.
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