access icon free Four-bit W-band switched line phase shifter in 90 nm SiGe

© The Institution of Engineering and Technology
Received 15/05/2018, Published 01/08/2018

A switched delay line phase shifter implemented in a 90 nm SiGe BiCMOS process utilising PIN diodes is presented. The 4-bit phase shifter utilises four SP4T switches for a simplified architecture. The frequency of operation is from 75 to 100 GHz, and the simulated input referred P1dB is 28.5 dBm. This type of phase shifter is especially suitable for high power transmit linear phased arrays. The chip occupies an area of 2.76 mm2 including the pads.

Inspec keywords: Ge-Si alloys; microwave switches; millimetre wave phase shifters; p-i-n diodes; millimetre wave diodes; semiconductor materials; delay lines; BiCMOS integrated circuits; field effect MIMIC

Other keywords: W-band; SP4T switches; switched delay line phase shifter; frequency 75.0 GHz to 100.0 GHz; high power transmit linear phased array; SiGe; PIN diodes; BiCMOS process; power 4.0 W; size 90.0 nm; word length 4 bit

Subjects: Junction and barrier diodes; Amplifiers; Other analogue circuits; Solid-state microwave circuits and devices; Mixed technology integrated circuits; Relays and switches; Microwave integrated circuits

References

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      • 3. Yang, J.G., Lee, J., Yang, K.: ‘A W-band InGaAs PIN-MMIC digital phase-shifter using a switched transmission-line structure’. 2012 Intl. Conf. Indium Phosphide and Related Materials, Santa Barbara, CA, 2012, pp. 99–101.
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      • 5. Song, P., Schmid, R.L., Ulusoy, A.Ç., et al: ‘A high-power, low-loss W-band SPDT switch using SiGe PIN diodes’. Radio Frequency Integrated Circuits Symp., Tampa, FL, 2014, pp. 195–198.
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      • 2. Sarkas, I., Khanpour, M., Tomkins, A., et al: ‘W-band 65-nm CMOS and SiGe BiCMOS transmitter and receiver with lumped I-Q phase shifters’. Radio Frequency Integrated Circuits Symp., Boston, MA, 2009, pp. 441–444.
http://iet.metastore.ingenta.com/content/journals/10.1049/el.2018.5380
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