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Compact modelling for quantum confinement for InGaAs nanowire gate all around MOSFET

Compact modelling for quantum confinement for InGaAs nanowire gate all around MOSFET

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In this Letter, a compact equation for calculating energy sub-bands inside III–V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor–oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. The authors use an approximation for Bessel functions with the introduction of one fitting parameter. The results show very good agreement with self-consistent Schrodinger–Poisson solver data.

References

    1. 1)
    2. 2)
      • 2. Alamo, J.A.d., et al: ‘III–V MOSFETs for future CMOS’. 2015 IEEE Compound Semiconductor Integrated Circuit Symp. (CSICS), New Orleans, LA, USA, October 2015.
    3. 3)
      • 3. Natarajan, S., et al: ‘A 14 nm logic technology featuring 2nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm SRAM cell size’. 2014 IEEE Int. Electron Devices Meeting, San Francisco, CA, USA, December 2014.
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      • 9. Watson, G.N.: ‘A treatise on the theory of Bessel functions’ (Cambridge University Press, Cambridge, UK, 1944).
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