© The Institution of Engineering and Technology
This Letter reports a 360° reflective-type phase shifter in 100-nm InGaAs pHEMT technology. A triple-resonating load technique is proposed and the optimum conditions are derived to achieve full 360° phase-shift range and minimise the insertion loss variation. The implemented reflective-type phase shifter achieves a measured phase-shift range of 360° and an insertion loss of at 94 GHz. Measured return loss is better than 14 dB across 360° phase-shift range.
References
-
-
1)
-
1. Kim, S.Y., Rebeiz, G.M.: ‘A low-power BiCMOS 4-element phased array receiver for 76–84 GHz radars and communication systems’, J. Solid-State Circuits, 2012, 47, (2), pp. 359–367 (doi: 10.1109/JSSC.2011.2170769).
-
2)
-
7. Han, K.W., Cui, H., Sun, X.W., et al: ‘The design of a 60 GHz low loss hybrid phase shifter with 360 degree phase shift’. Int. Symp. Communications and Information Technologies, Incheon, South Korea, September 2014, pp. 551–554.
-
3)
-
1. Meng, F., Ma, K., Yeo, K.S., Xu, S., Boon, C.C., Lim, W.M.: ‘Miniaturized 3-bit phase shifter for 60 GHz phased-array in 65 nm CMOS technology’, IEEE Microw. Wirel. Compon. Lett., 2014, 24, (1), pp. 50–52 (doi: 10.1109/LMWC.2013.2288266).
-
4)
-
2. Li, W.T., Chiang, Y.C., Tsai, J.H., Yang, H.Y., Cheng, J.H., Huang, T.W.: ‘60-GHz 5-bit phase shifter with integrated VGA phase-error compensation’, IEEE Trans. Microw. Theory Tech., 2013, 61, (3), pp. 1224–1235 (doi: 10.1109/TMTT.2013.2244226).
-
5)
-
4. Garg, R., Natarajan, A.S.: ‘A 28-GHz low-power phased-array receiver front-end with 360° RTPS phase shift range’, Trans. Microw. Theory Tech., 2017, 65, (11), pp. 1–12 (doi: 10.1109/TMTT.2017.2707414).
-
6)
-
2. Plouchart, J.O., Lee, W., Ozdag, C., et al: ‘A fully-integrated 94-GHz 32-element phased-array receiver in SiGe BiCMOS’. Proc. IEEE Radio Frequency Integrated Circuits Symp., Honolulu, HI, USA, June 2017, pp. 380–383.
-
7)
-
5. Natarajan, A., Valdes-Garcia, A., Sadhu, B., et al: ‘W-band dual-polarization phased-array transceiver front-end in SiGe BiCMOS’, Trans. Microw. Theory Tech., 2015, 63, (6), pp. 1989–2002 (doi: 10.1109/TMTT.2015.2422691).
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