access icon free Adaptive delay control for synchronous rectification phase-shifted full bridge converter with GaN HEMT

© The Institution of Engineering and Technology
Received 27/08/2017, Published 12/10/2017

An adaptive delay control method for a phase-shifted full bridge converter with a synchronous rectifier is presented. With this control, the delay time between primary and secondary switches can be optimised to reduce dead time, according to output power. Moreover, due to the poor third quadrant conduction of gallium nitride (GaN) high-electron-mobility transistors (HEMTs), the dead time needs to be optimised to utilise the benefits of a GaN HEMT. The experimental results with a 500 W prototype show that the efficiency can be improved by 0.7% with the proposed control.

Inspec keywords: power convertors; HEMT circuits; phase shifters; adaptive control; gallium compounds; bridge circuits; rectifying circuits; III-V semiconductors; delay systems; wide band gap semiconductors

Other keywords: synchronous rectification phase-shifted full bridge converter; dead time reduction; gallium nitride high-electron-mobility transistors; secondary switches; GaN; power 500 W; synchronous rectifier; HEMT; adaptive delay control method

Subjects: Power electronics, supply and supervisory circuits; Other analogue circuits; Distributed parameter control systems; Self-adjusting control systems

References

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      • 1. Schirone, L., Macellari, M., Pellitteri, F.: ‘Predictive dead time controller for GaN-based boost converters’, Power Electron., 2017, 10, (4), pp. 421–428.
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      • 3. Badstuebner, U., Biela, J., Kolar, J.W.: ‘An optimized, 99% efficient, 5 kW, phase-shift PWM DC–DC converter for data centers and telecom applications’. Proc. IEEE Int. Power Electronics Conf. (ECCE ASIA), Sapporo, Japan, June 2010, pp. 626–634.
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      • 5. O'Loughlin, M.: ‘UCC28950 600 W, phase-shifted, full-bridge application report’. Texas Instruments, 2010, p. 22.
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      • 4. Francesco, D.D., René, M.: ‘ZVS phase shift full bridge CFD2 optimized design’. Infineon Technologies AG, 2013, pp. 19–20.
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